EP3SE50F780C4N vs EP3SE50F780C4LN Vergleich

Detaillierter Direktvergleich von EP3SE50F780C4N von Intel und EP3SE50F780C4LN von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter EP3SE50F780C4N EP3SE50F780C4LN
Marke Intel Intel
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus NRND Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1.430,00 $650,00
Family Stratix III E Stratix III E
Logic Elements (LE) 47,500 —
Embedded Memory Bits 5,760,000 —
Embedded Memory (M9K/M144K blocks) 488 (per family datasheet) —
Number of LABs 1900 —
Maximum User I/Os 488 —
DSP Blocks (18x18 multipliers) 432 —
PLLs 12 (per family datasheet) —
Maximum Operating Frequency 717 MHz —
Transceiver Channels Up to 12 (per family, model-dependent) —
Transceiver Data Rate Up to 6.375 Gbps (per Stratix III E family) —
Process Node 40 nm 65 nm
Gehäuse 780-Ball FBGA, 29 mm x 29 mm, 1.0 mm pitch 780-ball FC-FBGA
Montageart Surface Mount (BGA) Surface Mount (BGA)
Versorgungsspannung Core 0.9 V, I/O 1.2 V-3.3 V (multi-rail) —
Betriebstemperatur 0C to +85C (C4 commercial grade) 0°C to 85°C (Commercial)
Configuration Modes JTAG, Passive Serial, Fast Passive Parallel Passive Serial, Fast Passive, Active Serial (AS), Active Parallel (AP), JTAG
RoHS-Status Lead-free / RoHS compliant Compliant
MSL-Level 3 (per JEDEC J-STD-020, FBGA package) —
Hard Memory Controller DDR2/DDR3 SDRAM (per Stratix III E family) —
Logic Elements — 47,500
LABs (Logic Array Blocks) — 1,900
Embedded Memory — 5,760,000 bits
User I/Os — 488
Core Voltage — 0.9 V
Speed Grade — C4
Lead-Free / RoHS — Yes (L suffix)
Maximum Toggle Frequency — 375 MHz
DSP Blocks — Yes (embedded multipliers)
Block RAM Type — M9K + M144K
Memory Architecture — SRAM-based, reprogrammable

Datenblätter & Ressourcen

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