EP4CE15F1717N vs EP4CE15E22C8N Vergleich
Detaillierter Direktvergleich von EP4CE15F1717N von Intel und EP4CE15E22C8N von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | EP4CE15F1717N | EP4CE15E22C8N |
|---|---|---|
| Marke | Intel | Intel |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $35,20 | $15,95 |
| Series | Cyclone IV E | Cyclone IV E |
| Logic Elements (LE) | 15,408 | — |
| Embedded Memory | 516,096 bits (56 M9K blocks) | — |
| Embedded 18x18 Multipliers | 56 | 56 |
| Maximum User I/Os | 165 | — |
| PLLs | 4 | — |
| Global Clock Networks | 20 | — |
| Process Technology | 60 nm low-power | 60 nm low-power CMOS |
| Core Voltage (VCCINT) | 1.0 V / 1.2 V | — |
| I/O Voltage (VCCIO) | 1.2 V / 1.8 V / 2.5 V / 3.0 V / 3.3 V | — |
| Betriebstemperatur | 0C to +85C (commercial "N" suffix) | 0C to +85C (Commercial) |
| Gehäuse | 256-ball F-BGA (FBGA-256) | 144-pin EQFP (Enhanced QFP) with Exposed Pad |
| Package Pitch | 1.0 mm | — |
| LVDS Performance | Up to 343 Mbps | — |
| Speed Grade | 7 | 8 |
| Configuration Mode | External serial/parallel flash (volatile SRAM) | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 3 (168 hours) | 3 |
| Logic Elements (LEs) | — | 15,408 |
| Embedded Memory (Bits) | — | 516,096 |
| Embedded Memory (Kbits) | — | 504 |
| General Purpose PLLs | — | 4 |
| User I/O Pins | — | 81 |
| Core Voltage | — | 1.2 V |
| Montageart | — | Surface Mount |
| Configuration Method | — | SRAM-based, AS / PS / JTAG |