EP4CE15U14A7N vs EP4CE15F23C8N Vergleich
Detaillierter Direktvergleich von EP4CE15U14A7N von Intel und EP4CE15F23C8N von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | EP4CE15U14A7N | EP4CE15F23C8N |
|---|---|---|
| Marke | Intel | Intel |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $43,50 | $33,10 |
| Family | Cyclone IV E | — |
| Logic Elements (LE) | 15,408 | — |
| Total Memory Bits | 516,096 bits | — |
| Embedded 18x18 Multipliers | 56 | — |
| General-Purpose PLLs | 4 | — |
| Maximum User I/Os | 165 | — |
| Gehäuse | 256-ball UBGA (Ultra-FineLine BGA) | 484-BGA (FineLine BGA, F23, 23x23 mm, 1.0 mm pitch) |
| Speed Grade | 7 | C8 (commercial, 8 ns internal timing) |
| Core Voltage | 1.2 V | — |
| Process Node | 60 nm low-power | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | 0C to 85C (Commercial) |
| Configuration Modes | JTAG, AS, AP, PS | AS / PS / JTAG / FPP |
| Bitstream Encryption | AES-128 (security-enhanced variant) | — |
| External Memory Support | DDR/DDR2 SDRAM, QDRII SRAM, RLDRAM II | — |
| RoHS-Status | Compliant (per distributor listings) | Compliant |
| Series | — | Cyclone IV E |
| Logic Elements | — | 15,408 |
| Embedded Memory Bits | — | 516,096 bits (63 KBytes) |
| Embedded Multipliers (18x18) | — | 343 |
| General-purpose PLLs | — | 4 |
| Maximum User I/O Pins | — | 343 |
| Process Technology | — | 60 nm low-leakage CMOS |
| Core Voltage (VCCINT) | — | 1.0 V to 1.2 V |
| I/O Bank Voltage (VCCIO) | — | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V |
| Montageart | — | Surface Mount (BGA) |
| MSL-Level | — | MSL3 (per JEDEC J-STD-020) |
| Hard IP Blocks | — | PCIe Gen1 root port, external memory interface |
| Embedded Memory Type | — | M9K (9 Kbit each) |