EPF6010ATC100-2 vs EPF6010ATC100-3N Vergleich
Detaillierter Direktvergleich von EPF6010ATC100-2 von Altera und EPF6010ATC100-3N von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Altera
EPF6010ATC100-2 - FLEX 6000 FPGA, 880 Gates, 71 I/O | Intel (Altera)
EPF6010ATC100-2 ObsoleteIntel
EPF6010ATC100-3N - FLEX 6000 FPGA, 880 Cells, 100-TQFP | Intel
EPF6010ATC100-3N ⚠ Letzte BestellmöglichkeitSpezifikationsvergleich
| Parameter | EPF6010ATC100-2 | EPF6010ATC100-3N |
|---|---|---|
| Marke | Altera | Intel |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Obsolete | Letzte Kaufgelegenheit |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $14,20 | $9,95 |
| Series | FLEX 6000 | — |
| Family | SRAM-based FPGA | FLEX 6000 |
| Manufacturer | Intel (formerly Altera) | — |
| Logic Elements / Gates | 880 gates (typical) | — |
| Logic Array Blocks (LABs) | 88 | 88 |
| User I/O Pins | 71 | — |
| Number of Logic Cells | 880 (per FLEX 6000 family datasheet) | — |
| Gehäuse | 100-pin TQFP (14x14 mm) | 100-pin TQFP (14 x 14 x 1.4 mm) |
| Speed Grade | -2 | -3 |
| Betriebstemperatur | 0C to 70C (commercial) | 0 °C to +70 °C (commercial) |
| Core Supply Voltage | 3.0 V to 3.6 V (typical 3.3 V) | — |
| I/O Supply Voltage | 3.3 V (5 V tolerant inputs per FLEX 6000 family) | — |
| Configuration Interface | JTAG (IEEE 1149.1) + serial configuration | — |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | 3 (168 hours) |
| RoHS-Status | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Process Node | [DATA_NEEDED: CMOS process node] | — |
| Total RAM Bits | [DATA_NEEDED: embedded RAM] | — |
| Logic Elements / Cells | — | 880 |
| Equivalent Gate Count | — | 10,000 gates |
| User I/Os | — | 71 |
| Supply Voltage (Operating) | — | 3.0 V to 3.6 V |
| Maximum Internal Frequency | — | 142.86 MHz |
| Process Technology | — | 0.42 µm CMOS |
| Programming Method | — | In-system SRAM via ByteBlaster/BitBlaster |