H5AN8G6NDJR-UHC vs H5AN8G6NCJR-UHC Vergleich
Detaillierter Direktvergleich von H5AN8G6NDJR-UHC von SK hynix und H5AN8G6NCJR-UHC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN8G6NDJR-UHC | H5AN8G6NCJR-UHC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $34,60 | $0,00 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Speicherorganisation | 512M x 16 | 512M x 16 |
| Speed Grade | 3200 Mbps (PC4-25600) | DDR4-2400 (2400 Mbps/pin) |
| Supply Voltage (VDD) | 1.2 V | — |
| Supply Voltage (VDDQ) | 1.2 V | — |
| Number of Terminals | 96 | — |
| Gehäuse | FBGA-96 (13x7.5 mm) | FBGA-96 (96-ball) |
| Package Shape | RECTANGULAR | — |
| JESD-30 Code | R-PBGA-B96 | — |
| Maximum Operating Temperature | 85 °C | — |
| Minimum Operating Temperature | 0 °C | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Halogenfrei | Yes | — |
| Additional Features | Auto/Self Refresh, Auto Precharge, Asynchronous Reset, Data Mask, Dynamic ODT, ZQ Calibration, CRC, Write Leveling | — |
| Versorgungsspannung | — | 1.2 V |
| Montageart | — | Surface Mount (BGA) |
| Betriebstemperatur | — | 0C to +95C |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask (DM) | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Dynamic On-Die Termination | — | Yes |
| ZQ Calibration | — | Yes |
| Lead-Free / Halogen-Free | — | Yes (per family datasheet) |
| RoHS-Status | — | [DATA_NEEDED: RoHS certification statement] |