H5AN8G8NAFR-UHC vs H5AN8G8NCJR-PBC Vergleich
Detaillierter Direktvergleich von H5AN8G8NAFR-UHC von SK hynix und H5AN8G8NCJR-PBC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN8G8NAFR-UHC | H5AN8G8NCJR-PBC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $2,40 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | — |
| Speicherorganisation | 1G x 8 | 1G x 8 (x8) |
| Datenrate | 2400 Mbps/pin (PC2400) | [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] |
| Supply Voltage (VDD) | 1.2 V (DDR4 standard) | 1.2 V |
| Schnittstelle | CMOS, synchronous | — |
| Gehäuse | FBGA-78 (PBGA78) | 78-ball FBGA |
| Montageart | Surface Mount | Surface Mount |
| Family | H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC | — |
| Speed Grade Suffix | UHC | — |
| RoHS-Status | Compliant (Lead-Free & Halogen-Free) | Lead-Free & Halogen-Free |
| Application Class | Main memory (high density, high bandwidth) | — |
| Betriebstemperatur | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| CAS Latency (CL) | [DATA_NEEDED: CAS Latency] | — |
| Refresh | [DATA_NEEDED: Refresh specification] | Auto-refresh and self-refresh |
| MSL-Level | [DATA_NEEDED: MSL Level] | — |
| Speichergröße | — | 8 Gb (1 GB) |
| Interface Voltage (VDDQ) | — | 1.2 V (SSTL12) |
| Architecture | — | CMOS, fully synchronous, dual-edge clocked |
| Bank Structure | — | 8 internal banks, bank-group architecture |
| Burst Length | — | BL8 |
| Eigenschaften | — | ODT, DM, DQS strobes, programmable CAS latency, self-refresh |
| Die Revision Family | — | CJR (H5AN8G8NCJR-xxC) |
| Typical Applications | — | PC/server main memory, embedded solder-down memory |