H5ANAG6NBJR-VKC vs H5ANAG4NBJR-VKC Vergleich
Detaillierter Direktvergleich von H5ANAG6NBJR-VKC von SK hynix und H5ANAG4NBJR-VKC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5ANAG6NBJR-VKC | H5ANAG4NBJR-VKC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | DRAM |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $15,00 | $14,40 |
| Manufacturer | SK Hynix | — |
| Part Number | H5ANAG6NBJR-VKC | — |
| Speichertyp | DDR4 SDRAM | — |
| Memory Density | 16Gb (2GB) | — |
| Speicherorganisation | [DATA_NEEDED: x16 organization per datasheet] | — |
| Datenrate | 2666 Mbps (per family reference, VKC speed code) | [DATA_NEEDED: data rate (MT/s) for -VKC bin] |
| Versorgungsspannung | 1.2 V (DDR4 standard) | — |
| Schnittstelle | DDR4, SSTL-12 | — |
| Gehäuse | FBGA-96 (PBGA96) | FBGA-78 (7.5 mm x 11 mm) |
| Montageart | Surface Mount | Surface Mount (BGA) |
| Betriebstemperatur | -40C to +95C (family grade reference) | — |
| Auto Self-Refresh | Yes | Yes |
| Data Mask Function | Yes | Yes |
| Asynchronous Reset | Yes | Yes |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | Yes |
| Write Leveling | Yes | Yes |
| CRC Function | Yes | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant (per distributor listing) |
| Product Type | — | DDR4 SDRAM |
| Density | — | 16 Gb |
| Betriebstemperaturbereich | — | -40 C to +95 C (case, industrial with auto self-refresh) |
| Speed Grade | — | VKC (commercial speed bin - see SK hynix part number decoder) |
| VDD Supply Voltage | — | [DATA_NEEDED: VDD supply voltage] |
| VDDQ Supply Voltage | — | [DATA_NEEDED: VDDQ supply voltage] |
| Dynamic ODT | — | Yes |
| CRC / CA Parity | — | Yes |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |
| Halogenfrei | — | [DATA_NEEDED: halogen-free status] |