H5ANAG8NBJR-RDC vs H5ANAG8NBJR-PBC Vergleich
Detaillierter Direktvergleich von H5ANAG8NBJR-RDC von SK hynix und H5ANAG8NBJR-PBC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5ANAG8NBJR-RDC | H5ANAG8NBJR-PBC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | DRAM | DRAM |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,55 | $31,50 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gbit (2 GB) |
| Speicherorganisation | 2G x 8 | x8 |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Schnittstelle | SSTL12 | — |
| Speed Grade (suffix R) | DDR4-2666 class | — |
| Gehäuse | 78-ball FBGA | FBGA-78 (7.5 mm x 11 mm) |
| Montageart | Surface Mount | Surface Mount |
| Refresh | Self-refresh and auto-refresh (8K/64ms class per family datasheet) | Self refresh, 1x/2x/4x refresh modes |
| Bank Groups | 4 (per 16Gb DDR4 family datasheet) | — |
| Data Strobe | DQS with read/write training | — |
| Data Bus Inversion | Supported (DBI) | — |
| CAS-Latenz | [DATA_NEEDED: CAS Latency] | — |
| Betriebstemperatur | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range] |
| RoHS-Status | Compliant (lead-free PBGA per family product data) | Compliant (Lead-Free & Halogen-Free per Hynix family datasheet) |
| Lebenszyklusstatus | Active | — |
| Speed Grade / Data Rate | — | PBC suffix, DDR4-2666 class |
| Bank Architecture | — | 16 banks in 4 bank groups (DDR4 standard) |
| Prefetch | — | 8n |
| Schnittstellentyp | — | Parallel, SSTL12 |
| CAS Latency (typical bin) | — | [DATA_NEEDED: CAS latency] |
| Die Revision | — | BJR |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |
| Standard Package Quantity | — | [DATA_NEEDED: standard quantity] |