IAUC120N04S6L012ATMA1 vs IAUC60N04S6N044ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC120N04S6L012ATMA1 von Infineon und IAUC60N04S6N044ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon
IAUC120N04S6L012ATMA1 ✓ AktivInfineon
IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC120N04S6L012ATMA1 | IAUC60N04S6N044ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,21 | $0,98 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 6 40V | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC | 120 A | — |
| Pulsed Drain Current (IDM) | 480 A | — |
| On-State Resistance (RDS(on)) at 10V VGS | 1.2 mΩ (typ) | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at 20V VGS] | — |
| Power Dissipation (PD) at TC | 115 W | — |
| Betriebstemperaturbereich | -55 °C to +175 °C (junction) | — |
| Gehäuse | PG-TDSON-8 (TDSON-8, surface mount with exposed pad) | PG-TDSON-8 (5x6 mm) with exposed pad |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified (IAUC prefix) |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| RoHS-Status | Compliant | Compliant |
| Delivery Form | Tape & Reel | — |
| Technology | — | OptiMOS-6 N-channel trench MOSFET |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) at Tc=25°C | — | 60 A |
| Continuous Drain Current (I_D) at Tc=100°C | — | [DATA_NEEDED: pulsed/current derated value] |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max @ V_GS=10V | — | 4.4 mΩ |
| On-Resistance R_DS(on) max @ V_GS=4.5V | — | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: typical gate charge] |
| Power Dissipation (P_D) at Tc=25°C | — | 42 W |
| Betriebs-Sperrschichttemperatur | — | -55°C to +175°C |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen-free status] |