IAUC120N06S5L015ATMA1 vs IAUC50N08S5N102ATMA1 Vergleich

Detaillierter Direktvergleich von IAUC120N06S5L015ATMA1 von Infineon und IAUC50N08S5N102ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 ✓ Aktiv
Infineon
IAUC50N08S5N102ATMA1 IAUC50N08S5N102ATMA1 - 80V 50A OptiMOS 5 N-MOSFET | Infineon

IAUC50N08S5N102ATMA1 - 80V 50A OptiMOS 5 N-MOSFET | Infineon

IAUC50N08S5N102ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IAUC120N06S5L015ATMA1 IAUC50N08S5N102ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,92 $0,51
Technology N-Channel MOSFET (OptiMOS 5) —
Drain-Source Voltage (VDS) 60 V 80 V
Continuous Drain Current (ID, Tc=25C) 235 A —
On-Resistance RDS(on) max (VGS=10 V) 1.5 mΩ —
Gate Charge (Qg, typ) 88 nC —
Power Dissipation (PD, Tc=25C) 167 W —
Betriebstemperaturbereich -55C to +175C (Tj) -55°C to +175°C
Gehäuse PG-TDSON-8-43 (Surface Mount) —
Montageart Surface Mount (exposed pad) Surface Mount
Automotive Qualification AEC-Q101 qualified —
Gate-Source Voltage (VGS) max ±20 V —
RoHS-Status Compliant Compliant
MSL-Level [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Drain-Source On-State Resistance Test Conditions VGS = 10 V, ID = 50 A —
Typical Application Automotive DC-DC, battery switches, motor drives —
Manufacturer — Infineon Technologies
Series — OptiMOS 5
Transistortyp — N-Channel MOSFET
Continuous Drain Current (ID) at TC=25°C — 50 A
On-Resistance (RDS(on)) — 10.2 mΩ @ 25 A, 10 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Gate-Source Voltage (VGS) Max — ±20 V
Total Gate Charge (Qg) — 21 nC @ 10 V
Input Capacitance (Ciss) — 1394 pF @ 40 V
Power Dissipation (PD) at TC=25°C — 60 W
Gehäuse / Bauform — PG-TDSON-8-33
Qualification — AEC-Q101

Datenblätter & Ressourcen

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