IAUC28N08S5L230ATMA1 vs IAUC100N04S6L025ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC28N08S5L230ATMA1 von Infineon und IAUC100N04S6L025ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC28N08S5L230ATMA1 - 80V 28A 23mΩ OptiMOS-5 N-Channel MOSFET | Infineon
IAUC28N08S5L230ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC28N08S5L230ATMA1 | IAUC100N04S6L025ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,71 | $0,62 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS-5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) | 28 A | — |
| Pulsed Drain Current (I<sub>DM</sub>) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 23 mΩ (typ) | — |
| Gate-Source Threshold (V<sub>GS(th)</sub>, typ) | 2.5 V | — |
| Gate Charge (Q<sub>g</sub>, typ) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | 38 W | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | -55 C to +175 C |
| Gehäuse | PG-TDSON-8-33 (5x6 mm SSO8) | PG-TDSON-8 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS-5 Power MOSFET | OptiMOS 6 40V trench MOSFET |
| Automotive Qualified | Yes (AEC-Q101) | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| On-State Resistance RDS(on) max at VGS=10V | — | 2.5 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Power Dissipation (PD) at TC=25C | — | 62 W |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead-Free | — | Yes |