IAUC28N08S5L230ATMA1 vs IAUC41N06S5L100ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC28N08S5L230ATMA1 von Infineon und IAUC41N06S5L100ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC28N08S5L230ATMA1 - 80V 28A 23mΩ OptiMOS-5 N-Channel MOSFET | Infineon
IAUC28N08S5L230ATMA1 ✓ AktivInfineon
IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon
IAUC41N06S5L100ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC28N08S5L230ATMA1 | IAUC41N06S5L100ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,71 | $0,43 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS-5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) | 28 A | — |
| Pulsed Drain Current (I<sub>DM</sub>) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 23 mΩ (typ) | — |
| Gate-Source Threshold (V<sub>GS(th)</sub>, typ) | 2.5 V | — |
| Gate Charge (Q<sub>g</sub>, typ) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | 38 W | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| Gehäuse | PG-TDSON-8-33 (5x6 mm SSO8) | PG-TDSON-8-33 (TDSON-8, 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS-5 Power MOSFET | OptiMOS 5 (Trench MOSFET) |
| Automotive Qualified | Yes (AEC-Q101) | Yes (AEC-Q101 automotive grade) |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tj) | — | 41 A |
| Power Dissipation (PD, TC) | — | 42 W |
| On-State Resistance (RDS(on)) max | — | 10 mOhm at VGS=10 V |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: max VGS rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Betriebstemperaturbereich | — | -55C to +175C |
| Channel Type | — | N-Channel |
| Interconnect | — | Copper clip (low-inductance) |