IAUC60N10S5L110ATMA1 vs IAUCN04S7N027GATMA1 Vergleich

Detaillierter Direktvergleich von IAUC60N10S5L110ATMA1 von Infineon und IAUCN04S7N027GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IAUC60N10S5L110ATMA1 IAUC60N10S5L110ATMA1 - 100V 11mΩ N-Ch OptiMOS 5 | Infineon

IAUC60N10S5L110ATMA1 - 100V 11mΩ N-Ch OptiMOS 5 | Infineon

IAUC60N10S5L110ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IAUC60N10S5L110ATMA1 IAUCN04S7N027GATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,66 $0,72
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™-5 —
Transistortyp N-Channel MOSFET —
Drain-Source Voltage (V<sub>DS</sub>) 100 V —
Continuous Drain Current (I<sub>D</sub>, Tc) 60 A —
Power Dissipation (P<sub>D</sub>, Tc) 88 W —
R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V 11 mΩ —
Gate Threshold Voltage (V<sub>GS(th)</sub>) 1.2 V —
Gehäuse PG-TDSON-8-33 (TDSON-8 Single) —
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich [DATA_NEEDED: min/max operating temperature] [DATA_NEEDED: operating temperature range]
Gate-Source Voltage (V<sub>GS</sub>) Max [DATA_NEEDED: VGS max rating] —
Total Gate Charge (Q<sub>G</sub>) [DATA_NEEDED: Qg at specified Vgs] —
Avalanche Energy (E<sub>AS</sub>) [DATA_NEEDED: single-pulse avalanche energy] —
Lead-Free / RoHS Yes (RoHS compliant per LCSC listing) —
Packing Code ATMA1 (Tape & Reel) —
MSL-Level 1 (per LCSC datasheet snippet) [DATA_NEEDED: MSL]
Halogenfrei Yes (per Infineon product classification) —
Customer Info / FGR J52 (per Infineon product data) —
Product Family — OptiMOS 7
Channel Type — N-Channel
Drain-Source Voltage (Vds max) — 40 V
Continuous Drain Current (Id) — 117 A
On-Resistance (Rds(on) max) — 2.67 mOhm
Power Dissipation (Pd) — 70 W (Tc)
Gehäuse / Bauform — PG-THSOG-4-1 (SSO4G 5x6)
Qualification — Automotive
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th)]
Gate-Source Voltage Max (Vgs) — [DATA_NEEDED: Vgs max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
RoHS-Status — Compliant
Substrate Compatibility — IMS substrates and legacy FR-4

Datenblätter & Ressourcen

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