IAUC60N10S5L110ATMA1 vs IAUCN10S5L110TATMA1 Vergleich
Detaillierter Direktvergleich von IAUC60N10S5L110ATMA1 von Infineon und IAUCN10S5L110TATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon
IAUCN10S5L110TATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC60N10S5L110ATMA1 | IAUCN10S5L110TATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,66 | $2,08 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™-5 | OptiMOS 5 |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>, Tc) | 60 A | — |
| Power Dissipation (P<sub>D</sub>, Tc) | 88 W | — |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | 11 mΩ | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 1.2 V | — |
| Gehäuse | PG-TDSON-8-33 (TDSON-8 Single) | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | [DATA_NEEDED: min/max operating temperature] | — |
| Gate-Source Voltage (V<sub>GS</sub>) Max | [DATA_NEEDED: VGS max rating] | — |
| Total Gate Charge (Q<sub>G</sub>) | [DATA_NEEDED: Qg at specified Vgs] | — |
| Avalanche Energy (E<sub>AS</sub>) | [DATA_NEEDED: single-pulse avalanche energy] | — |
| Lead-Free / RoHS | Yes (RoHS compliant per LCSC listing) | — |
| Packing Code | ATMA1 (Tape & Reel) | — |
| MSL-Level | 1 (per LCSC datasheet snippet) | MSL1 (260°C peak reflow) |
| Halogenfrei | Yes (per Infineon product classification) | — |
| Customer Info / FGR | J52 (per Infineon product data) | — |
| Technology | — | N-Channel MOSFET, Trench, Logic Level |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tj | — | 61 A |
| On-Resistance RDS(on) max at VGS=10V | — | 11.3 mΩ |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: gate-source voltage rating] |
| Power Dissipation (PD) at Tc | — | 88 W |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Avalanche Rated | — | 100% Avalanche Tested |
| Automotive Qualification | — | AEC-Q101 Extended Qualification |
| RoHS-Status | — | Compliant |