IAUC90N10S5N062ATMA1 vs IAUC60N04S6N044ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC90N10S5N062ATMA1 von Infineon und IAUC60N04S6N044ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC90N10S5N062ATMA1 - 100V 90A 6.2mOhm OptiMOS 5 MOSFET | Infineon
IAUC90N10S5N062ATMA1 ✓ AktivInfineon
IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC90N10S5N062ATMA1 | IAUC60N04S6N044ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,95 | $0,98 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc=25C | 90 A | — |
| Maximum On-Resistance RDS(on) max at VGS=10V | 6.2 mOhm | — |
| Gate-Source Threshold Voltage VGS(th) typ | 3.8 V | — |
| Maximum Power Dissipation (Tc=25C) | 115 W | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | -55°C to +175°C |
| Gehäuse | PG-TDSON-8-34 (TDSON-8) | PG-TDSON-8 (5x6 mm) with exposed pad |
| Montageart | Surface Mount | Surface Mount |
| Technology | Trench MOSFET (OptiMOS 5, Generation 5) | OptiMOS-6 N-channel trench MOSFET |
| Avalanche Rated | Yes (100% avalanche tested) | — |
| MSL (Moisture Sensitivity Level) | MSL1 (260 C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified (IAUC prefix) |
| RoHS / Green Product | Yes (RoHS compliant, Green Product) | — |
| Lead-Free | Yes | — |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) at Tc=25°C | — | 60 A |
| Continuous Drain Current (I_D) at Tc=100°C | — | [DATA_NEEDED: pulsed/current derated value] |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max @ V_GS=10V | — | 4.4 mΩ |
| On-Resistance R_DS(on) max @ V_GS=4.5V | — | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: typical gate charge] |
| Power Dissipation (P_D) at Tc=25°C | — | 42 W |
| MSL-Level | — | 1 (unlimited) |
| RoHS-Status | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen-free status] |