IAUCN04S7L005ATMA1 vs IAUCN04S7L050HATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN04S7L005ATMA1 von Infineon und IAUCN04S7L050HATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUCN04S7L005ATMA1 - 40V 430A 0.52mΩ OptiMOS 7 MOSFET | Infineon
IAUCN04S7L005ATMA1 ✓ AktivInfineon
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
IAUCN04S7L050HATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUCN04S7L005ATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,85 | $0,83 |
| Technology | OptiMOS 7 (trench N-channel MOSFET) | Trench MOSFET, OptiMOS™ 7 40V |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, T_C=25°C) | 430 A (Tj) | — |
| Continuous Drain Current (I_D, T_C=100°C) | [DATA_NEEDED: I_D at T_C=100°C] | — |
| On-Resistance R_DS(on) max | 0.52 mΩ | — |
| Power Dissipation (P_D) | 179 W (T_C) | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical and min/max] | — |
| Total Gate Charge (Q_g) | [DATA_NEEDED: total Q_g in nC] | — |
| Betriebstemperaturbereich | -55°C to +175°C (Tj) | — |
| Gehäuse | PG-TDSON-8-43 (TDSON-8) | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 8 | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 (family-level, automotive grade) |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS™ 7 |
| Configuration | — | Dual N-Channel (Dual Drain, Half-Bridge) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID), Tc=25°C | — | 65 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.04 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) @ Tc=25°C | — | 40 W |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |