IAUCN04S7L019ATMA1 vs BSC040N10NS5ATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN04S7L019ATMA1 von Infineon und BSC040N10NS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IAUCN04S7L019ATMA1 | BSC040N10NS5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,48 | $0,93 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS™ 7 | — |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (V<sub>DS</sub>) | 40 V | — |
| Continuous Drain Current (I<sub>D</sub>) | 120 A | — |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V | 1.91 mΩ | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: Vgs(th) typical/max value] | — |
| Gate Charge (Q<sub>g</sub>) | [DATA_NEEDED: Qg total/nominal value] | — |
| Gehäuse | PG-TDSON-8-33 | PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8 |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55°C to +175°C (junction) | — |
| Power Dissipation (P<sub>D</sub>) | [DATA_NEEDED: Pd max at 25C] | — |
| Wärmewiderstand, Sperrschicht-Umgebung | [DATA_NEEDED: RthJA value] | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 (per Infineon OptiMOS 5 family) |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 | — |
| Packaging | Tape & Reel (13-inch reel) | — |
| Standard Pack Quantity | 5000 pieces | — |
| Ordering Code Suffix | ATMA1 (Tape & Reel 13") | — |
| Technology | — | OptiMOS 5 |
| Drain-Source Voltage (VDS) | — | 100 V |
| Maximum On-Resistance (RDS(on)) | — | 4 mOhm |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) max | — | 136 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 139 W |
| Betriebstemperaturbereich | — | -55C to +150C |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Output Capacitance Reduction | — | Up to 44% vs previous generation |
| RDS(on) Reduction | — | Up to 43% vs previous generation |