IAUCN04S7N019DATMA1 vs IAUCN04S7L050HATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN04S7N019DATMA1 von Infineon und IAUCN04S7L050HATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUCN04S7N019DATMA1 - 40V Dual N-Channel MOSFET Array | Infineon
IAUCN04S7N019DATMA1 ✓ AktivInfineon
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
IAUCN04S7L050HATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUCN04S7N019DATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,05 | $0,83 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 7 40V | Trench MOSFET, OptiMOS™ 7 40V |
| Configuration | Dual N-Channel (array) | Dual N-Channel (Dual Drain, Half-Bridge) |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tc) | 160 A (Tj) | — |
| Power Dissipation (PD, Tc) | 96 W | — |
| Gehäuse | PG-TDSON-8-60 (SuperSO8) | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| Montageart | Surface Mount | Surface Mount |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | -55 °C to +175 °C |
| Input Capacitance (Ciss, typ.) | 1.465 nF | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at 10V VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | [DATA_NEEDED: total gate charge] |
| Automotive Qualification | AEC-Q101 (family) | AEC-Q101 (family-level, automotive grade) |
| ESD Protection | Yes (gate integrated) | — |
| MSL-Level | 1 (per JEDEC J-STD-020, family default) | 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | Compliant |
| Series | — | OptiMOS™ 7 |
| Continuous Drain Current (ID), Tc=25°C | — | 65 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.04 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (PD) @ Tc=25°C | — | 40 W |