IAUCN08S7N024TATMA1 vs IAUC60N04S6L030HATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN08S7N024TATMA1 von Infineon und IAUC60N04S6L030HATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUCN08S7N024TATMA1 - 80V 2.44mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN08S7N024TATMA1 ✓ AktivInfineon
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUCN08S7N024TATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,45 | $0,94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide Semiconductor) | — |
| Drain-Source Voltage (Vds) | 80 V | — |
| Continuous Drain Current (Id) at Tj | 165 A | — |
| Power Dissipation (Pd) at Tc | 157 W | — |
| Rds(on) Max at Vgs=10V | 2.44 mOhm | — |
| Gehäuse / Bauform | PG-LHDSO-10-1 (SSO10T, 5x7 mm²) | — |
| Montageart | Surface Mount | Surface Mount |
| Cooling | Top-side cooled | — |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per part number suffix) |
| RoHS-Status | Compliant | Compliant |
| Gate Threshold (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typ] | — |
| Part Series | — | OptiMOS 6 |
| Configuration | — | Half-Bridge (2 N-Channel) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TJ | — | 60 A |
| On-Resistance R_DS(on) at VGS=10V | — | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | — | 35 nC |
| Output Capacitance (Coss) | — | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | — | 596 pF |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Maximum Power Dissipation (PD) at TC | — | 75 W |
| Betriebs-Sperrschichttemperatur | — | -55 C to +175 C |
| Gehäuse | — | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |