IAUZ30N08S5N186ATMA1 vs IAUC100N08S5N043ATMA1 Vergleich
Detaillierter Direktvergleich von IAUZ30N08S5N186ATMA1 von Infineon und IAUC100N08S5N043ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUZ30N08S5N186ATMA1 - 80V 18.6mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ30N08S5N186ATMA1 ✓ AktivInfineon
IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΩ N-Ch MOSFET | Infineon
IAUC100N08S5N043ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUZ30N08S5N186ATMA1 | IAUC100N08S5N043ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,48 | $1,72 |
| Technology | OptiMOS 5 N-Channel Power MOSFET (trench) | OptiMOS 5 (Trench) |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID, Tj) | 30 A | — |
| Power Dissipation (PD, Tc) | 41 W | — |
| On-State Resistance (RDS(on)) | 18.6 mΩ (typical, VGS = 10 V) | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at VGS=10V] | — |
| Betriebstemperaturbereich | -55 °C to +175 °C (automotive) | -55°C to +175°C |
| Gehäuse | PG-TSDSON-8-32 (5x6 mm) | PG-TDSON-8-34 (SuperSO8) |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| RoHS-Status | Compliant | — |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | — |
| Manufacturer | — | Infineon Technologies |
| Part Series | — | IAUC / OptiMOS 5 |
| Transistortyp | — | N-Channel MOSFET (Enhancement Mode) |
| Maximum Drain-Source Voltage (V<sub>DS</sub>) | — | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | 100 A (package limited) |
| Continuous Drain Current (chip-limited) | — | 120 A at T<sub>C</sub>=25°C, R<sub>thJC</sub>=1.2 K/W |
| Maximum R<sub>DS(on)</sub> | — | 4.3 mΩ |
| Maximum Power Dissipation (P<sub>D</sub>) | — | 125 W (T<sub>C</sub>) |
| Pin-Anzahl | — | 8 |
| Feuchtigkeitsempfindlichkeitsgrad (MSL) | — | MSL1 (up to 260°C peak reflow) |
| Avalanche Rating | — | 100% Avalanche Tested |
| RoHS / REACH | — | RoHS Compliant (Green Product) |
| Channel Mode | — | Enhancement |