IAUZ40N06S5L050ATMA1 vs IAUZ40N08S5N100ATMA1 Vergleich
Detaillierter Direktvergleich von IAUZ40N06S5L050ATMA1 von Infineon und IAUZ40N08S5N100ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUZ40N06S5L050ATMA1 - 60V 90A 5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ40N06S5L050ATMA1 ✓ AktivInfineon
IAUZ40N08S5N100ATMA1 - 80V 40A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ40N08S5N100ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUZ40N06S5L050ATMA1 | IAUZ40N08S5N100ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,71 | $0,71 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 60 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | [DATA_NEEDED: continuous drain current at Tc=25C] | — |
| Drain Current at T<sub>j</sub> | 90 A | — |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V | 5 mΩ | — |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A | 6.4 mΩ | — |
| Gate Threshold Voltage V<sub>GS(th)</sub> | 2.2 V at 29 µA | — |
| Total Gate Charge Q<sub>G</sub> | 28.2 nC | — |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | 71 W | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| Gehäuse | PG-TSDSON-8-33 (TSDSON-8) | PG-TDSON-8 (S3O8) 3.3 × 3.3 mm |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (super-junction N-channel) | OptiMOS-5 N-Channel MOSFET |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 qualified |
| RoHS-Status | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 40 A |
| Power Dissipation (PD, Tc=25°C) | — | 68 W |
| On-Resistance RDS(on) max | — | 10 mΩ @ VGS=10 V, ID=20 A |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge Qg typ | — | 24.2 nC @ VGS=10 V |
| Input Capacitance Ciss | — | 1591 pF @ VDS=40 V |
| Gate-Source Voltage VGS max | — | ±20 V |
| Betriebstemperaturbereich | — | -55 °C to +175 °C (TJ) |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |
| Channel Type | — | N-Channel |