IGD08N120S7ATMA1 vs BSS214NWH6327XTSA1 Vergleich
Detaillierter Direktvergleich von IGD08N120S7ATMA1 von Infineon und BSS214NWH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IGD08N120S7ATMA1 | BSS214NWH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | IGBTs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,65 | $0,15 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | IGBT 7 (S7) Trench Field Stop | — |
| Collector-Emitter Voltage (Vce max) | 1200 V | — |
| Continuous Collector Current (Ic, Tc=25C) | 24 A | — |
| Pulsed Collector Current (Icm) | [DATA_NEEDED: pulsed collector current] | — |
| Total Power Dissipation (Ptot) | 106 W | — |
| Gate-Emitter Voltage (Vge max) | [DATA_NEEDED: Vge max] | — |
| VCE(sat) at rated Ic | 1.65 V | — |
| Co-packaged Diode | Yes (anti-parallel emitter diode) | — |
| Betriebs-Sperrschichttemperatur | -40C to +175C (industry grade) | — |
| Gehäuse | PG-TO252-3 (DPAK) | PG-SOT323 (SOT-323-3) |
| Montageart | Surface Mount | Surface Mount |
| Technology | Trench Field Stop, 7th generation | MOSFET (Metal Oxide) |
| Configuration | Single | — |
| RoHS-Status | Compliant | Compliant |
| Part Number | — | BSS214NWH6327XTSA1 |
| Series | — | OptiMOS |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (Vdss) | — | 20 V |
| Continuous Drain Current (Id) @ 25C | — | 1.5 A |
| Rds(on) Max @ Vgs=4.5V | — | 250 mOhm |
| Drive Voltage (Max Rds On, Min Rds On) | — | 2.5 V, 4.5 V |
| Power Dissipation (Pd) @ Ta=25C | — | 500 mW |
| Betriebstemperatur | — | -55C to +150C (junction) |
| Qualification | — | AEC-Q101 (Automotive) |
| Lead-Free | — | Yes |