IGLR70R200D2SXUMA1 vs IGLT65R035D2ATMA1 Vergleich
Detaillierter Direktvergleich von IGLR70R200D2SXUMA1 von Infineon und IGLT65R035D2ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IGLR70R200D2SXUMA1 | IGLT65R035D2ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,24 | $5,10 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN G5 | CoolGaN™ G5 TOLT |
| Channel Type | N-Channel | — |
| Technology | GaN HEMT (E-mode, enhancement-mode) | — |
| Drain-Source Voltage (VDS) | 700 V | — |
| Continuous Drain Current (ID, Tc) | 9.3 A | — |
| Power Dissipation (PD, Tc) | 34 W | — |
| On-Resistance (RDS(on), max) | 200 mΩ | — |
| Total Gate Charge (Qg) | 1.26 nC | — |
| Output Capacitance (Coss) | 91 pF | — |
| Reverse Transfer Capacitance (Crss) | 0.21 pF | — |
| Gate Threshold Voltage (VGS(th), typ) | 1.2 V | — |
| Betriebstemperaturbereich | -40 °C to +150 °C | [DATA_NEEDED: Tj min/max] |
| Gehäuse | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) | PG-HDSOP-16-8 (top-side cooled) |
| RoHS | Compliant | — |
| Transistortyp | — | N-Channel enhancement-mode GaN HEMT |
| Drain-Source Voltage (Vdss) | — | 650 V |
| Continuous Drain Current (Id) at Tc | — | 47 A |
| Maximum Power Dissipation (Pd) at Tc | — | 154 W |
| On-Resistance (Rds(on)) | — | [DATA_NEEDED: typical Rds(on) in mohm] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: typical Vgs(th)] |
| Input Capacitance (Ciss) at Vds=400V | — | 540 pF |
| Montageart | — | Surface Mount |
| Cooling Configuration | — | Top-side cooled (TOLT) |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |
| RoHS-Status | — | Compliant |
| Lead-Free | — | Yes |
| Production Wafer Size | — | 200 mm (8 inch) |