IPB024N10N5ATMA1 vs IAUCN10S5L110TATMA1 Vergleich
Detaillierter Direktvergleich von IPB024N10N5ATMA1 von Infineon und IAUCN10S5L110TATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB024N10N5ATMA1 - 100V 2.4mΩ OptiMOS 5 N-Channel MOSFET | Infineon
IPB024N10N5ATMA1 ✓ AktivInfineon
IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon
IAUCN10S5L110TATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPB024N10N5ATMA1 | IAUCN10S5L110TATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,86 | $2,08 |
| Technology | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) | N-Channel MOSFET, Trench, Logic Level |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, TC=25C) | 180 A | — |
| Power Dissipation (PD, TC=25C) | 250 W | — |
| On-Resistance RDS(on) max @ VGS=10V | 2.4 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: Qg total gate charge] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total gate charge] | — |
| Input Capacitance Ciss | [DATA_NEEDED: Ciss value] | — |
| Output Capacitance Coss | [DATA_NEEDED: Coss value] | — |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | — |
| Betriebstemperaturbereich | -55C to +175C (junction) | — |
| Gehäuse | PG-TO263-7 (D2PAK-7) | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (unlimited floor life at <30C/85% RH) | MSL1 (260°C peak reflow) |
| Packaging | Tape & Reel (13-inch reel) | — |
| Halogenfrei | Yes (per Infineon product family policy) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| Continuous Drain Current (ID) at Tj | — | 61 A |
| On-Resistance RDS(on) max at VGS=10V | — | 11.3 mΩ |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: gate-source voltage rating] |
| Power Dissipation (PD) at Tc | — | 88 W |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Avalanche Rated | — | 100% Avalanche Tested |
| Automotive Qualification | — | AEC-Q101 Extended Qualification |