IPB024N10N5ATMA1 vs IPB021N10NM5LF2ATMA1 Vergleich
Detaillierter Direktvergleich von IPB024N10N5ATMA1 von Infineon und IPB021N10NM5LF2ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB024N10N5ATMA1 - 100V 2.4mΩ OptiMOS 5 N-Channel MOSFET | Infineon
IPB024N10N5ATMA1 ✓ AktivInfineon
IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon
IPB021N10NM5LF2ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPB024N10N5ATMA1 | IPB021N10NM5LF2ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,86 | $2,75 |
| Technology | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, TC=25C) | 180 A | — |
| Power Dissipation (PD, TC=25C) | 250 W | — |
| On-Resistance RDS(on) max @ VGS=10V | 2.4 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: Qg total gate charge] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total gate charge] | — |
| Input Capacitance Ciss | [DATA_NEEDED: Ciss value] | — |
| Output Capacitance Coss | [DATA_NEEDED: Coss value] | — |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | — |
| Betriebstemperaturbereich | -55C to +175C (junction) | -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range] |
| Gehäuse | PG-TO263-7 (D2PAK-7) | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (unlimited floor life at <30C/85% RH) | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] |
| Packaging | Tape & Reel (13-inch reel) | — |
| Halogenfrei | Yes (per Infineon product family policy) | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 5 Linear FET 2 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D) at T_C=25°C | — | 176 A |
| Continuous Drain Current (I_D) at T_A=25°C | — | 30 A |
| R_DS(on) Maximum | — | 2.1 mΩ |
| Gate-Source Voltage (V_GS) Maximum | — | ±20 V [DATA_NEEDED: absolute max rated V_GS] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min] |
| Power Dissipation (P_D) at T_C=25°C | — | 375 W |
| Power Dissipation (P_D) at T_A=25°C | — | 3.8 W |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | — | 10 V, 15 V |