IPB35N10S3L26ATMA1 vs IPG20N10S4L22AATMA1 Vergleich
Detaillierter Direktvergleich von IPB35N10S3L26ATMA1 von Infineon und IPG20N10S4L22AATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPB35N10S3L26ATMA1 | IPG20N10S4L22AATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,15 | $1,45 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-T | — |
| Channel Type | N-Channel | — |
| Maximum Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC | 35 A | — |
| Power Dissipation (PD) at TC | 71 W | — |
| Package Type | PG-TO263-3 (D2PAK-2) | — |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (Gate, Drain, Source) | — |
| Channel Mode | Enhancement | — |
| RDS(on) (typical per Infineon product page) | 26.3 mΩ | — |
| Typical Gate Charge Qg @ Vgs | 80 nC | — |
| Maximum Drain-Source Resistance Rds | 1.7 mΩ (per RS Components listing) | — |
| Minimum Operating Temperature | -55 C | — |
| Maximum Power Dissipation Pd | 81 W (per RS Components listing) | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant |
| AEC-Q101 Qualification | [DATA_NEEDED: AEC-Q101 qualification status] | — |
| FET Type | — | Dual N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 100 V |
| Continuous Drain Current (I<sub>D</sub>) | — | 20 A |
| On-State Resistance (R<sub>DS(on)</sub>) | — | 22 mΩ (typical) |
| Power Dissipation (P<sub>D</sub>) | — | 60 W |
| Gate-Source Voltage (V<sub>GS</sub>) | — | ±20 V |
| Gate Threshold (V<sub>GS(th)</sub>) | — | [DATA_NEEDED: Vgs(th)] |
| Gehäuse | — | PG-TDSON-8-10 (Wettable Flank) |
| Lead Configuration | — | Wettable Flank |
| Automotive Qualification | — | AEC-Q101 |
| Technology | — | OptiMOS T2 |
| Betriebstemperatur | — | -55°C to +175°C |
| Channel Count | — | 2 (dual independent) |