IPB60R040CFD7ATMA1 vs IPL60R065C7AUMA1 Vergleich
Detaillierter Direktvergleich von IPB60R040CFD7ATMA1 von Infineon und IPL60R065C7AUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPB60R040CFD7ATMA1 | IPL60R065C7AUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $5,19 | $2,95 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS CFD7 | — |
| Technology | Superjunction (SJ) N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 50 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 40 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 4 V | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | — |
| Verlustleistung (TC=25°C) | 227 W | — |
| Betriebstemperaturbereich | -55°C to +150°C | -55 °C to +150 °C (T_J) |
| Gehäuse | PG-TO263-3-2 (D2PAK) | — |
| Montageart | Surface Mount | Surface Mount |
| Integrated Body Diode | Yes - ultra-fast CoolMOS CFD7 diode | — |
| MSL-Level | 1 | — |
| RoHS-Status | Compliant | Compliant with Exemption |
| Lead-Free | Yes | — |
| Target Applications | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) | — |
| Series | — | CoolMOS C7 |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Process Technology | — | CoolMOS C7 (Superjunction) |
| Maximum Drain-Source Voltage (V_DS) | — | 600 V |
| Continuous Drain Current (I_D, T_C=25°C) | — | 29 A |
| On-Resistance (R_DS(on), typ., V_GS=10V) | — | 65 mΩ |
| Maximum Power Dissipation (P_D, T_C=25°C) | — | 180 W |
| Gate-Source Voltage (V_GS, max) | — | ±20 V |
| Gate-Source Threshold (V_GS(th), typ.) | — | 3.5 V |
| Gehäuse / Bauform | — | PG-VSON-4-1 (Source-Down) |
| Automotive Qualified (AEC-Q101) | — | No |
| Total Gate Charge (Q_G, typ.) | — | [DATA_NEEDED: Q_G typ. value] |
| Output Capacitance Stored Energy (E_OSS) | — | [DATA_NEEDED: E_OSS typ. value] |