IPB60R165CPATMA1 vs IPD60R145CFD7ATMA1 Vergleich
Detaillierter Direktvergleich von IPB60R165CPATMA1 von Infineon und IPD60R145CFD7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB60R165CPATMA1 - 600V 165mΩ CoolMOS CP N-Channel MOSFET | Infineon
IPB60R165CPATMA1 ✓ AktivInfineon
IPD60R145CFD7ATMA1 - 600V 16A 145mOhm CoolMOS CFD7 MOSFET | Infineon
IPD60R145CFD7ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPB60R165CPATMA1 | IPD60R145CFD7ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,78 | $1,05 |
| Technology | CoolMOS CP (superjunction, N-Channel) | CoolMOS CFD7 (superjunction) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 21 A | — |
| Power Dissipation (PD, Tc=25°C) | 192 W | — |
| On-Resistance RDS(on), max (VGS=10V) | 165 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th), typ) | 3.5 V | — |
| Total Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typical value] | — |
| Operating Temperature Range (TJ) | -55°C to +150°C | — |
| Gehäuse | PG-TO263-3-2 (D2PAK-2) | TO-252AA (DPAK) surface mount |
| Montageart | Surface Mount | Surface Mount (DPAK, 3-pin + tab) |
| RoHS-Status | Compliant (Pb-free lead plating) | Compliant |
| JEDEC Qualification | Qualified per JEDEC for target applications | — |
| dv/dt Ruggedness | Extreme dv/dt rated | — |
| Polarity / Channel | N-Channel | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 600 V |
| Continuous Drain Current (I<sub>D</sub>) | — | 16 A (T<sub>C</sub> = 25C) |
| On-Resistance R<sub>DS(on)</sub> max | — | 145 mOhm |
| Power Dissipation (P<sub>D</sub>) | — | 83 W (T<sub>C</sub> = 25C) |
| Gate Threshold Voltage V<sub>GS(th)</sub> | — | [DATA_NEEDED: Vth typical/min/max] |
| Body Diode | — | Integrated fast body diode (low Q<sub>rr</sub>) |
| Betriebstemperatur | — | -55C to +150C (junction) |
| Pin-Anzahl | — | 3 (Gate, Drain, Source) |
| Series | — | CoolMOS CFD7 |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |
| Target Application | — | ZVS / LLC resonant converters, soft switching |