IPB60R280P7ATMA1 vs IPD80R280P7ATMA1 Vergleich
Detaillierter Direktvergleich von IPB60R280P7ATMA1 von Infineon und IPD80R280P7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPB60R280P7ATMA1 | IPD80R280P7ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,88 | $1,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 (600 V) | CoolMOS P7 |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Technology | Superjunction (SJ) | Superjunction (CoolMOS P7) |
| Drain-Source Voltage (V_DSS) | 600 V | — |
| Continuous Drain Current (I_D, T_C=25°C) | 12 A | — |
| On-Resistance R_DS(on) max (V_GS=10V) | 280 mOhm | — |
| Gate-Source Threshold V_GS(th) typ | 3.5 V | — |
| Power Dissipation P_D (T_C=25°C) | 53 W | — |
| Gehäuse | PG-TO263-3 (D2PAK) | PG-TO252-3 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (2 + Tab) | — |
| Betriebstemperaturbereich | -55 °C to +150 °C (T_j max) | — |
| Configuration | Single N-Channel | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Generation | 7th Gen CoolMOS (successor to P6) | — |
| Drain-Source Voltage (V_DS) | — | 800 V |
| Continuous Drain Current (I_D, Tc) | — | 17 A |
| R_DS(on) max at V_GS=10V | — | 280 mOhm |
| Power Dissipation (P_D, Tc) | — | 101 W |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| Betriebs-Sperrschichttemperatur | — | -55C to +150C |
| ESD Protection | — | Integrated (per datasheet) |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |