IPC100N04S51R7ATMA1 vs IAUC100N04S6N022ATMA1 Vergleich

Detaillierter Direktvergleich von IPC100N04S51R7ATMA1 von Infineon und IAUC100N04S6N022ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IPC100N04S51R7ATMA1 IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 ✓ Aktiv
Infineon
IAUC100N04S6N022ATMA1 IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N022ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IPC100N04S51R7ATMA1 IAUC100N04S6N022ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,82 $0,82
Manufacturer Infineon Technologies —
Series OptiMOS-5 —
Transistortyp N-Channel MOSFET, Enhancement Mode —
Drain-Source Voltage VDS 40 V —
Continuous Drain Current ID 100 A (at TC) —
Pulsed Drain Current IDM [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage VGS [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) value] —
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) at VGS=10V] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissipation PD 115 W (at TC) —
Thermal Resistance RthJC 1.3 K/W —
Betriebs-Sperrschichttemperatur -55 °C to +175 °C —
Gehäuse PG-TDSON-8-34 (SS08 leadless) PG-TDSON-8 (5x6 mm) leadless
Montageart Surface Mount Surface Mount
MSL-Level MSL1 (260 °C peak reflow) 1 (per JEDEC J-STD-020)
AEC-Q101 Qualified Yes —
Avalanche Tested 100% tested —
RoHS-Status Compliant (Green Product) Compliant
Built-in Body Diode Yes —
Technology — OptiMOS 6, N-Channel MOSFET
Drain-Source Voltage (V_DSS) — 40 V
Continuous Drain Current (I_D, Tc) — 100 A
Power Dissipation (P_D, Tc) — 75 W
R_DS(on) (typ at V_GS=10V) — 2.2 mOhm
Betriebstemperaturbereich — -55C to +175C (junction)
Polarity — N-Channel enhancement mode
Automotive Qualification — AEC-Q100 (IAUC family)
Pin-Anzahl — 8
Gate Threshold V_GS(th) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge Q_g — [DATA_NEEDED: total gate charge]
Lead-Free — Yes

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