IPC50N04S5L5R5ATMA1 vs BSC005N03LS5IATMA1 Vergleich
Detaillierter Direktvergleich von IPC50N04S5L5R5ATMA1 von Infineon und BSC005N03LS5IATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPC50N04S5L5R5ATMA1 | BSC005N03LS5IATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,36 | $1,32 |
| Transistortyp | N-Channel MOSFET | — |
| Mode | Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc) | 50 A | — |
| Maximum Drain Current (silicon-limited, 25 °C) | 60 A | — |
| On-Resistance RDS(on) max @ VGS=10 V | 5.5 mΩ | — |
| Gate Threshold VGS(th) | Logic Level (enhancement at ≤ 4.5 V VGS) | — |
| Power Dissipation (Tc) | 42 W | — |
| Thermal Resistance Junction-to-Case RthJC | 3.6 K/W | — |
| Betriebstemperaturbereich | -55 °C to +175 °C | — |
| Gehäuse | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) | PG-TDSON-8 FL (SuperSO8 5x6) |
| Montageart | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| MSL (Moisture Sensitivity Level) | MSL1 | — |
| Peak Reflow Temperature | 260 °C | — |
| Avalanche Rating | 100 % Avalanche Tested | — |
| RoHS / REACH | RoHS Compliant (Green Product) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC005N03LS5IATMA1 |
| Technology | — | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 42 A |
| Continuous Drain Current (ID) at Tc | — | 433 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max | — | 0.55 mΩ at VGS = 10 V, ID = 50 A |
| Gate-Source Threshold Voltage VGS(th) | — | 2 V (typ) at VGS = 10 mA |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 188 W |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |
| Polarity | — | N-Channel |
| RoHS-Status | — | Compliant (per LCSC listing) |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |