IPC70N04S5L4R2ATMA1 vs BSC019N08NS5ATMA1 Vergleich

Detaillierter Direktvergleich von IPC70N04S5L4R2ATMA1 von Infineon und BSC019N08NS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPC70N04S5L4R2ATMA1 BSC019N08NS5ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,78 $1,78
FET Type N-Channel —
Technology MOSFET (Metal Oxide) OptiMOS 5 (N-channel trench)
Drain to Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) @ Tc=25°C 70 A —
Power Dissipation (Pd) @ Tc=25°C 50 W —
R_DS(on) Max @ Vgs=10V 4.2 mΩ (typ) —
Gate Threshold (Vgs(th)) Logic Level (4.5 V max Rds On, Min Rds On) —
Drive Voltage (Max Rds On, Min Rds On) 4.5 V —
Gehäuse PG-TDSON-8-34 (Surface Mount) PG-TSON-8-3 (SuperSO8 5x6 mm)
Operating Temperature (Tj) -55°C to +175°C —
Montageart Surface Mount Surface Mount
MSL-Level MSL1 (up to 260°C peak reflow) 1
Automotive Qualification AEC-Q101 —
Avalanche Tested 100% (60 A production test) —
RoHS-Status Compliant (Green Product) Compliant
Configuration Single with Built-in Diode —
Case Connection DRAIN —
Manufacturer — Infineon Technologies
Polarity — N-Channel
Drain-Source Voltage (VDS) max — 80 V
Gate-Source Voltage (VGS) max — ±20 V
Continuous Drain Current (ID) at TA=25C — 28 A
Continuous Drain Current (ID) at TC=25C — 237 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) max at VGS=10V — 1.9 mOhm
Gate Threshold Voltage VGS(th) typ — 3.0 V
Total Gate Charge Qg — [DATA_NEEDED: total gate charge Qg]
Power Dissipation (TA=25C) — 3 W
Power Dissipation (TC=25C) — 214 W
Betriebstemperaturbereich — -55 C to +150 C
Avalanche Rated — Yes

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