IPC70N04S5L4R2ATMA1 vs IPC50N04S5L5R5ATMA1 Vergleich

Detaillierter Direktvergleich von IPC70N04S5L4R2ATMA1 von Infineon und IPC50N04S5L5R5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPC70N04S5L4R2ATMA1 IPC50N04S5L5R5ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,78 $0,36
FET Type N-Channel —
Technology MOSFET (Metal Oxide) —
Drain to Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) @ Tc=25°C 70 A —
Power Dissipation (Pd) @ Tc=25°C 50 W —
R_DS(on) Max @ Vgs=10V 4.2 mΩ (typ) —
Gate Threshold (Vgs(th)) Logic Level (4.5 V max Rds On, Min Rds On) —
Drive Voltage (Max Rds On, Min Rds On) 4.5 V —
Gehäuse PG-TDSON-8-34 (Surface Mount) PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad)
Operating Temperature (Tj) -55°C to +175°C —
Montageart Surface Mount Surface Mount
MSL-Level MSL1 (up to 260°C peak reflow) —
Automotive Qualification AEC-Q101 —
Avalanche Tested 100% (60 A production test) —
RoHS-Status Compliant (Green Product) —
Configuration Single with Built-in Diode —
Case Connection DRAIN —
Transistortyp — N-Channel MOSFET
Mode — Enhancement Mode
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc) — 50 A
Maximum Drain Current (silicon-limited, 25 °C) — 60 A
On-Resistance RDS(on) max @ VGS=10 V — 5.5 mΩ
Gate Threshold VGS(th) — Logic Level (enhancement at ≤ 4.5 V VGS)
Power Dissipation (Tc) — 42 W
Thermal Resistance Junction-to-Case RthJC — 3.6 K/W
Betriebstemperaturbereich — -55 °C to +175 °C
AEC-Q101 Qualification — Qualified (automotive grade)
MSL (Moisture Sensitivity Level) — MSL1
Peak Reflow Temperature — 260 °C
Avalanche Rating — 100 % Avalanche Tested
RoHS / REACH — RoHS Compliant (Green Product)

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern