IPC90N04S5L3R3ATMA1 vs ISC011N06LM5ATMA1 Vergleich
Detaillierter Direktvergleich von IPC90N04S5L3R3ATMA1 von Infineon und ISC011N06LM5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPC90N04S5L3R3ATMA1 - 40V 90A OptiMOS N-Channel MOSFET | Infineon
IPC90N04S5L3R3ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPC90N04S5L3R3ATMA1 | ISC011N06LM5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,96 | $0,74 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 40V | — |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Continuous Drain Current (ID) at TC=25°C | 90 A | — |
| On-Resistance RDS(on) max at VGS=10V | 3.3 mΩ | — |
| On-Resistance RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage VGS(th) | 1.7 V to 2.7 V (logic level) | — |
| Total Power Dissipation (TC=25°C) | 62 W | — |
| Betriebs-Sperrschichttemperatur | -55°C to +175°C | — |
| Storage Temperature Range | [DATA_NEEDED: storage temp range] | — |
| Gehäuse | PG-TDSON-8-34 (TDSON-8) | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| MSL Moisture Sensitivity | MSL1 (per JEDEC J-STD-020) | — |
| Peak Reflow Temperature | 260°C | — |
| Qualification | AEC-Q101 automotive qualified | — |
| Avalanche Tested | 100% (production-level) | — |
| RoHS Compliance | Compliant (Green Product) | — |
| Part Number | — | ISC011N06LM5ATMA1 |
| Technology | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta | — | 37 A |
| Continuous Drain Current (ID) at Tc | — | 288 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 188 W |
| RDS(on) max at VGS=10V | — | 1.15 mOhm |
| Pin-Anzahl | — | 8 |
| Betriebstemperaturbereich | — | -55C to +175C |
| RoHS-Status | — | Compliant |
| MSL-Level | — | [DATA_NEEDED: MSL level] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |