IPD042P03L3GATMA1 vs IPD060N03LGATMA1 Vergleich
Detaillierter Direktvergleich von IPD042P03L3GATMA1 von Infineon und IPD060N03LGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD042P03L3GATMA1 | IPD060N03LGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,28 | $0,20 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -30 V | 30 V |
| Continuous Drain Current (ID, Tc=25°C) | -70 A | — |
| Pulsed Drain Current (IDM) | -280 A | — |
| RDS(on) max @ VGS = -10 V | 4.2 mΩ | — |
| RDS(on) max @ VGS = -4.5 V | [DATA_NEEDED: RDS(on) @ -4.5 V] | — |
| Gate Threshold Voltage (VGS(th)) | -1.5 V (typ) | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Total Power Dissipation (PD @ Tc=25°C) | 150 W | — |
| Single-Pulse Avalanche Energy (EAS) | 290 mJ | — |
| Betriebstemperaturbereich | -55°C to +175°C (TJ) | — |
| Gehäuse | PG-TO252-3 (DPAK) | — |
| Technology | OptiMOS™ P (Trench) | — |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 | 1 (Unlimited) |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 30V |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID, TC=25C) | — | 50 A |
| Pulsed Drain Current (IDM, TC=25C, tp<=10us) | — | 200 A |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Gate Threshold Voltage (VGS(th), typ) | — | 1.7 V |
| On-State Resistance (RDS(on), VGS=10V) | — | 6.0 mOhm (typ) / 7.5 mOhm (max) |
| On-State Resistance (RDS(on), VGS=4.5V) | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Total Gate Charge (Qg, typ) | — | 21 nC |
| Output Charge (Qoss, typ) | — | [DATA_NEEDED: Qoss] |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr] |
| Power Dissipation (PD, TC=25C) | — | 56 W |
| Betriebs-Sperrschichttemperatur | — | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC, max) | — | 2.5 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA, max, std PCB) | — | 62 C/W |
| Gehäuse / Bauform | — | PG-TO252-3 (DPAK) |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Packing | — | Tape & Reel (T/R), 2500 per reel |
| AEC-Q101 / Automotive Grade | — | Not qualified |
| Technology / Generation | — | OptiMOS 30V, trench MOSFET |