IPD090N03LGATMA1 vs IRL540NPBF Vergleich
Detaillierter Direktvergleich von IPD090N03LGATMA1 von Infineon und IRL540NPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD090N03LGATMA1 | IRL540NPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,34 | $0,86 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (Vdss) | 30 V | — |
| Continuous Drain Current (Id) @ Tc=25C | 40 A | — |
| Continuous Drain Current (Id) @ Tc=100C | [DATA_NEEDED: Id at 100C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed Id] | — |
| Maximum Power Dissipation (Pd) @ Tc=25C | 42 W | — |
| On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A | 9 mOhm (typical) | — |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | [DATA_NEEDED: Rds(on) at 4.5V] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | 49.3 nC |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| Betriebstemperaturbereich | -55C to +175C (junction) | — |
| Gehäuse | PG-TO252-3-11 (DPAK) | TO-220AB (through-hole) |
| Montageart | Surface Mount | Through Hole |
| MSL-Level | 1 (unlimited) | — |
| RoHS-Status | Compliant | Compliant |
| Technology Family | OptiMOS 30V | — |
| Configuration | Single | — |
| Manufacturer | — | Infineon (formerly International Rectifier) |
| Part Number | — | IRL540NPBF |
| Transistortyp | — | N-Channel MOSFET |
| Technology | — | HEXFET (Planar DMOS) |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Gate-to-Source Voltage (VGS) max | — | +/-16 V |
| Continuous Drain Current (ID) at Tc=25C | — | 36 A |
| Pulsed Drain Current (IDM) | — | 130 A (pulsed) |
| On-Resistance RDS(on) max | — | 44 mOhm at VGS=5V |
| Gate Threshold Voltage (VGS(th)) | — | 1 V to 2 V (logic level) |
| Power Dissipation (PD) at Tc=25C | — | 140 W |
| Betriebs-Sperrschichttemperatur | — | -55 C to +175 C |
| Lead-Free | — | Yes (PBF suffix) |