IPD30N06S2L13ATMA4 vs IPD30N08S2L21ATMA1 Vergleich
Detaillierter Direktvergleich von IPD30N06S2L13ATMA4 von Infineon und IPD30N08S2L21ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N06S2L13ATMA4 ✓ AktivInfineon
IPD30N08S2L21ATMA1 - 75V 30A N-Ch OptiMOS MOSFET DPAK | Infineon
IPD30N08S2L21ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPD30N06S2L13ATMA4 | IPD30N08S2L21ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,48 | $0,48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS | — |
| Channel Type | N-Channel | — |
| Mode | Enhancement | — |
| Drain-Source Voltage (Vds) | 55 V | — |
| Continuous Drain Current (Id) | 30 A (Tc) | — |
| Power Dissipation (Pd) | 136 W (Tc) | — |
| Gehäuse | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK-2) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55 °C to +175 °C (Tj) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) | — |
| Lead-Free / RoHS | Yes (Green Package) | — |
| Avalanche Tested | 100 % production-tested | — |
| Technology | Planar (OptiMOS) | — |
| On-State Resistance (Rds(on)) | [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] | — |
| Gate-Source Threshold (Vgs(th)) | Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typ at Vds=25V] | — |
| Diode Reverse Recovery (trr) | [DATA_NEEDED: trr typ] | — |
| Pin-Anzahl | 3 (Drain tab + Gate + Source) | 3 (Drain tab + Gate + Source) |
| Tape and Reel Packaging | Yes (T&R per IEC 60286-3) | — |
| Series | — | OptiMOS |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at Tc=25C | — | 30 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance (RDS(on)) at VGS=10 V | — | 26 milliohm (typ) |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level (L series) |
| Gate Charge (Qg) typ | — | 56 nC |
| Power Dissipation (PD) at Tc=25C | — | 136 W |
| Betriebstemperaturbereich | — | -55C to +175C |
| Maximum Junction Temperature | — | +175C |
| RoHS-Status | — | Compliant |
| MSL-Level | — | 1 |