IPD30N10S3L34ATMA2 vs IPD35N10S3L26ATMA2 Vergleich
Detaillierter Direktvergleich von IPD30N10S3L34ATMA2 von Infineon und IPD35N10S3L26ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD30N10S3L34ATMA2 | IPD35N10S3L26ATMA2 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,92 | $1,05 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D, Tc) | 30 A | — |
| Pulsed Drain Current (I_DM) | 180 A | — |
| Power Dissipation (P_D, Tc) | 57 W | — |
| R_DS(on) max at V_GS=10V | 31 mOhm (typ) | — |
| Gate Threshold Voltage V_GS(th) max | 2.4 V | — |
| Total Gate Charge (Qg) max | 31 nC | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | — |
| Package / Supplier Device Package | PG-TO252-3-11 (DPAK) | — |
| Montageart | Surface Mount | Surface Mount |
| Pin / Tab Count | 3 (2 + Tab) | — |
| Technology | OptiMOS-T (trench) | Trench MOSFET (OptiMOS-T) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| MSL-Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| RoHS-Status | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS-T |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 35 A |
| On-Resistance R<sub>DS(on)</sub> max | — | 24 mOhm |
| Power Dissipation (Ptot, Tc) | — | 71 W |
| Gate Threshold V<sub>GS(th)</sub> | — | [DATA_NEEDED: gate threshold typical/range] |
| Betriebstemperaturbereich | — | [DATA_NEEDED: Tj min/max] |
| Gehäuse | — | PG-TO252-3-11 (DPAK) |
| Pin-Anzahl | — | 3 (Drain, Source, Gate + tab) |
| Lead-Free | — | Yes |