IPD50N04S408ATMA1 vs IPB35N10S3L26ATMA1 Vergleich

Detaillierter Direktvergleich von IPD50N04S408ATMA1 von Infineon und IPB35N10S3L26ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPD50N04S408ATMA1 IPB35N10S3L26ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,69 $1,15
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T2 OptiMOS-T
Polarity N-Channel —
Mode Enhancement-mode —
Drain-Source Voltage (V DS) 40 V —
Continuous Drain Current (I D, Tc) 50 A —
Power Dissipation (P D, Tc) 46 W —
Gehäuse PG-TO252-3-313 (DPAK) —
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -55 °C to +175 °C —
MSL-Level MSL1 (260 °C peak reflow) —
Automotive Qualification AEC-Q101 —
Avalanche Tested 100 % Avalanche tested —
Green Package (RoHS) RoHS compliant —
Gate Threshold Voltage (V GS(th)) [DATA_NEEDED: V GS(th) typical] —
On-State Resistance (R DS(on)) [DATA_NEEDED: R DS(on) at V GS = 10 V] —
Total Gate Charge (Q G) [DATA_NEEDED: Q G typical] —
Channel Type — N-Channel
Maximum Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC — 35 A
Power Dissipation (PD) at TC — 71 W
Package Type — PG-TO263-3 (D2PAK-2)
Pin-Anzahl — 3 (Gate, Drain, Source)
Channel Mode — Enhancement
RDS(on) (typical per Infineon product page) — 26.3 mΩ
Typical Gate Charge Qg @ Vgs — 80 nC
Maximum Drain-Source Resistance Rds — 1.7 mΩ (per RS Components listing)
Minimum Operating Temperature — -55 C
Maximum Power Dissipation Pd — 81 W (per RS Components listing)
RoHS-Status — [DATA_NEEDED: RoHS status]
AEC-Q101 Qualification — [DATA_NEEDED: AEC-Q101 qualification status]

Datenblätter & Ressourcen

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