IPD60R145CFD7ATMA1 vs IPD60R380C6ATMA1 Vergleich
Detaillierter Direktvergleich von IPD60R145CFD7ATMA1 von Infineon und IPD60R380C6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD60R145CFD7ATMA1 - 600V 16A 145mOhm CoolMOS CFD7 MOSFET | Infineon
IPD60R145CFD7ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPD60R145CFD7ATMA1 | IPD60R380C6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,05 | $0,41 |
| FET Type | N-Channel | N-Channel |
| Technology | CoolMOS CFD7 (superjunction) | CoolMOS C6 Superjunction |
| Drain-Source Voltage (V<sub>DS</sub>) | 600 V | — |
| Continuous Drain Current (I<sub>D</sub>) | 16 A (T<sub>C</sub> = 25C) | — |
| On-Resistance R<sub>DS(on)</sub> max | 145 mOhm | — |
| Power Dissipation (P<sub>D</sub>) | 83 W (T<sub>C</sub> = 25C) | — |
| Gate Threshold Voltage V<sub>GS(th)</sub> | [DATA_NEEDED: Vth typical/min/max] | — |
| Gehäuse | TO-252AA (DPAK) surface mount | PG-TO252-3 (DPAK) |
| Body Diode | Integrated fast body diode (low Q<sub>rr</sub>) | — |
| Betriebstemperatur | -55C to +150C (junction) | — |
| Montageart | Surface Mount (DPAK, 3-pin + tab) | Surface Mount |
| Pin-Anzahl | 3 (Gate, Drain, Source) | — |
| Series | CoolMOS CFD7 | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| RoHS-Status | Compliant | Compliant |
| Target Application | ZVS / LLC resonant converters, soft switching | — |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) at TC=25C | — | 10.6 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | — | 380 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage max] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TC=25C | — | 83 W |
| Operating Junction Temperature (TJ) | — | -55C to +150C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Drain-Tab Connection | — | Exposed pad (electrically connected to drain) |