IPD70N10S312ATMA1 vs IPD30N10S3L34ATMA1 Vergleich
Detaillierter Direktvergleich von IPD70N10S312ATMA1 von Infineon und IPD30N10S3L34ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD30N10S3L34ATMA1 - 100V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N10S3L34ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPD70N10S312ATMA1 | IPD30N10S3L34ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,92 | $0,38 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IPD70N10S312ATMA1 | — |
| Product Family | OptiMOS-T Power-Transistor | OptiMOS-T2 |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc) | 70 A | — |
| Pulsed Drain Current (IDM) | 180 A | 180 A |
| Power Dissipation (PD, Tc) | 125 W | — |
| On-State Resistance (RDS(on)) | 11.1 mΩ @ 70 A, 10 V VGS | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Input Capacitance (Ciss) | 4355 pF @ 25 V | — |
| Total Gate Charge (Qg) | 65 nC @ 10 V | — |
| Operating Temperature (TJ) | -55 °C to +175 °C | — |
| Gehäuse | PG-TO252-3-11 (DPAK, 2 Leads + Tab) | PG-TO252-3-11 (DPAK-2 / SC-63) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (up to 260 °C peak reflow) | 1 (JEDEC J-STD-020, 260°C peak reflow) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Avalanche Tested | 100 % (per datasheet) | — |
| RoHS Compliance | Green product, RoHS compliant | — |
| Transistortyp | — | N-Channel Enhancement Mode MOSFET |
| Continuous Drain Current (ID, Tc=25°C) | — | 30 A |
| Power Dissipation (PD, Tc=25°C) | — | 57 W |
| Drain-Source On-Resistance (RDS(on) max) | — | 31 mΩ @ VGS=10 V |
| Gate-Source Threshold Voltage (VGS(th) typ) | — | 1.7 V (range 1.0 V to 2.5 V) |
| Total Gate Charge (Qg typ) | — | 23 nC |
| Betriebs-Sperrschichttemperatur | — | -55°C to +175°C |
| RoHS / REACH | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Avalanche Rated | — | 100% Avalanche tested |