IPD70N10S312ATMA2 vs IPD70N10S312ATMA1 Vergleich

Detaillierter Direktvergleich von IPD70N10S312ATMA2 von Infineon und IPD70N10S312ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPD70N10S312ATMA2 IPD70N10S312ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,69 $0,92
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Number IPD70N10S312ATMA2 IPD70N10S312ATMA1
Technology OptiMOS-T Power-MOSFET (N-Channel) —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc) 70 A 70 A
Power Dissipation (Ptot, Tc=25C) 125 W —
On-State Resistance RDS(on) [DATA_NEEDED: typical RDS(on) at VGS=10V] —
Gate-Source Voltage (VGS) ±20 V ±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: VGS(th)]
Betriebstemperaturbereich -55C to +175C —
Gehäuse PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK, 2 Leads + Tab)
Montageart Surface Mount Surface Mount
Pin-Anzahl 3 (Gate, Drain, Source) —
Channel Type N-Channel Enhancement Mode —
RoHS-Status Compliant —
MSL-Level 1 (unlimited floor life) MSL1 (up to 260 °C peak reflow)
Avalanche Rated Yes —
Product Family — OptiMOS-T Power-Transistor
FET Type — N-Channel, Enhancement Mode
Pulsed Drain Current (IDM) — 180 A
Power Dissipation (PD, Tc) — 125 W
On-State Resistance (RDS(on)) — 11.1 mΩ @ 70 A, 10 V VGS
Input Capacitance (Ciss) — 4355 pF @ 25 V
Total Gate Charge (Qg) — 65 nC @ 10 V
Operating Temperature (TJ) — -55 °C to +175 °C
Automotive Qualification — AEC-Q101
Avalanche Tested — 100 % (per datasheet)
RoHS Compliance — Green product, RoHS compliant

Datenblätter & Ressourcen

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