IPD90N03S4L02ATMA1 vs IPD031N06L3GATMA1 Vergleich
Detaillierter Direktvergleich von IPD90N03S4L02ATMA1 von Infineon und IPD031N06L3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD90N03S4L02ATMA1 - 30V 90A OptiMOS-T2 N-Channel MOSFET | Infineon
IPD90N03S4L02ATMA1 ✓ AktivInfineon
IPD031N06L3GATMA1 - 60V 100A 3.1mΩ N-Ch OptiMOS 3 MOSFET | Infineon
IPD031N06L3GATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPD90N03S4L02ATMA1 | IPD031N06L3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,58 | $0,48 |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide), OptiMOS-T2 trench | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (VDS) | 30 V | 60 V |
| Continuous Drain Current (ID) at Tc | 90 A | — |
| Power Dissipation (PD) at Tc | 136 W | — |
| RDS(on) Max at VGS=10 V | 2.2 mΩ | — |
| RDS(on) Max at VGS=4.5 V | [DATA_NEEDED: typical value at VGS=4.5 V] | — |
| Gate Drive Voltage (VGS) | 4.5 V to 10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical value] | 1.0 V to 2.2 V |
| Betriebs-Sperrschichttemperatur | -55°C to +175°C | — |
| Avalanche Rated | 100% Avalanche tested | — |
| Gehäuse | PG-TO252-3-11 (DPAK, surface mount) | PG-TO252-3 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) | 1 (Unlimited) |
| RoHS-Status | Compliant (Green Package) | Compliant |
| Automotive Qualification | AEC-Q101 qualified | — |
| Series | OptiMOS-T2 | OptiMOS 3 |
| Continuous Drain Current (ID) at TC=25°C | — | 100 A |
| Pulsed Drain Current (IDM) | — | 400 A |
| Maximum Power Dissipation (PD) at TC=25°C | — | 167 W |
| RDS(on) Max at VGS=10V | — | 3.1 mΩ |
| Gate Drive Voltage (Max RDS(on)) | — | 4.5 V, 10 V |
| Total Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg typical value] |
| Betriebstemperaturbereich | — | -55°C to +175°C |