IPD90N03S4L02ATMA1 vs IPD090N03LGATMA1 Vergleich
Detaillierter Direktvergleich von IPD90N03S4L02ATMA1 von Infineon und IPD090N03LGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPD90N03S4L02ATMA1 - 30V 90A OptiMOS-T2 N-Channel MOSFET | Infineon
IPD90N03S4L02ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPD90N03S4L02ATMA1 | IPD090N03LGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,58 | $0,34 |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide), OptiMOS-T2 trench | — |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Tc | 90 A | — |
| Power Dissipation (PD) at Tc | 136 W | — |
| RDS(on) Max at VGS=10 V | 2.2 mΩ | — |
| RDS(on) Max at VGS=4.5 V | [DATA_NEEDED: typical value at VGS=4.5 V] | — |
| Gate Drive Voltage (VGS) | 4.5 V to 10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical value] | — |
| Betriebs-Sperrschichttemperatur | -55°C to +175°C | — |
| Avalanche Rated | 100% Avalanche tested | — |
| Gehäuse | PG-TO252-3-11 (DPAK, surface mount) | PG-TO252-3-11 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) | 1 (unlimited) |
| RoHS-Status | Compliant (Green Package) | Compliant |
| Automotive Qualification | AEC-Q101 qualified | — |
| Series | OptiMOS-T2 | — |
| Drain-Source Voltage (Vdss) | — | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | — | 40 A |
| Continuous Drain Current (Id) @ Tc=100C | — | [DATA_NEEDED: Id at 100C] |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed Id] |
| Maximum Power Dissipation (Pd) @ Tc=25C | — | 42 W |
| On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A | — | 9 mOhm (typical) |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | — | [DATA_NEEDED: Rds(on) at 4.5V] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr] |
| Betriebstemperaturbereich | — | -55C to +175C (junction) |
| Technology Family | — | OptiMOS 30V |
| Configuration | — | Single |