IPD90N06S407ATMA2 vs IPD30N10S3L34ATMA2 Vergleich
Detaillierter Direktvergleich von IPD90N06S407ATMA2 von Infineon und IPD30N10S3L34ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPD90N06S407ATMA2 | IPD30N10S3L34ATMA2 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,84 | $0,92 |
| FET Type | N-Channel Enhancement Mode | N-Channel |
| Drain-to-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D at T_C) | 90 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | 180 A |
| R_DS(on) Max at V_GS=10 V, I_D=90 A | 6.9 mOhm | — |
| Gate Threshold Voltage (V_GS(th)) | 4 V at 40 uA | — |
| Total Gate Charge (Q_G) at V_GS=10 V | 56 nC | — |
| Maximum Power Dissipation (P_D at T_C) | 79 W | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | -55 C to +175 C |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Gehäuse | PG-TO252-3-11 (DPAK) | — |
| Montageart | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (Green Product) | — |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 C peak reflow) | — |
| Automotive Qualification | AEC-Q101 Qualified | AEC-Q101 |
| Avalanche Rating | 100% Avalanche Tested | — |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D, Tc) | — | 30 A |
| Power Dissipation (P_D, Tc) | — | 57 W |
| R_DS(on) max at V_GS=10V | — | 31 mOhm (typ) |
| Gate Threshold Voltage V_GS(th) max | — | 2.4 V |
| Total Gate Charge (Qg) max | — | 31 nC |
| Package / Supplier Device Package | — | PG-TO252-3-11 (DPAK) |
| Pin / Tab Count | — | 3 (2 + Tab) |
| Technology | — | OptiMOS-T (trench) |
| MSL-Level | — | [DATA_NEEDED: MSL level] |
| RoHS-Status | — | Compliant |