IPP045N10N3GXKSA1 vs IPP037N08N3GXKSA1 Vergleich
Detaillierter Direktvergleich von IPP045N10N3GXKSA1 von Infineon und IPP037N08N3GXKSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPP045N10N3GXKSA1 | IPP037N08N3GXKSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,20 | $1,32 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPP045N10N3GXKSA1 | — |
| Technology | OptiMOS 3 | MOSFET (Metal Oxide) - OptiMOS™ 3 |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25°C | 100 A | — |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=100°C | [DATA_NEEDED: I_D at TC=100C] | — |
| Pulsed Drain Current (I<sub>D,pulse</sub>) | 137 A | — |
| On-Resistance R<sub>DS(on)</sub> max at V<sub>GS</sub>=10V | 4.5 mΩ | — |
| Gate Threshold Voltage V<sub>GS(th)</sub> | 3.5 V (typical, per LCSC listing) | — |
| Power Dissipation P<sub>D</sub> at T<sub>C</sub>=25°C | 214 W | — |
| Gehäuse | TO-220-3 (PG-TO220-3) through-hole | PG-TO220-3 (Through Hole) |
| Betriebstemperaturbereich | -55 °C to +175 °C (junction, typical MOSFET limit) | -55°C to +175°C (junction) |
| Montageart | Through Hole | Through Hole |
| RoHS-Status | Compliant (per LCSC datasheet excerpt) | Compliant |
| Lead-Free | Yes (Infineon G/GX part suffix) | — |
| MSL-Level | N/A (through-hole package) | — |
| FET Type | — | N-Channel |
| Drain to Source Voltage (Vdss) | — | 80 V |
| Continuous Drain Current (Id) @ Tc=25°C | — | 100 A |
| RDS(on) Max @ VGS=10V | — | 3.75 mΩ |
| Drive Voltage (Max RDS(on), Min RDS(on)) | — | 6 V, 10 V |
| Power Dissipation (Pd) @ Tc=25°C | — | 214 W |
| Pin-Anzahl | — | 3 |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typ/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ @ VGS=10V] |
| Avalanche Energy Rating (EAS) | — | [DATA_NEEDED: EAS] |