IPT059N15N3ATMA1 vs IPP075N15N3GXKSA1 Vergleich

Detaillierter Direktvergleich von IPT059N15N3ATMA1 von Infineon und IPP075N15N3GXKSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPT059N15N3ATMA1 IPP075N15N3GXKSA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,05 $1,92
Transistortyp N-Channel MOSFET —
Technology OptiMOS™ 3 (trench) N-Channel MOSFET (OptiMOS 3)
Drain-Source Voltage (VDS) max 150 V —
Continuous Drain Current (ID) at TC=25°C 155 A —
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V 5.9 mΩ —
Power Dissipation (PD) at TC=25°C 375 W —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) typ [DATA_NEEDED: Qg typical] —
Gehäuse PG-HSOF-8-1 (TOLL / TO-Leadless) PG-TO220-3 (TO-220 through-hole)
Montageart Surface Mount Through Hole
Betriebstemperaturbereich -55 °C to +175 °C (TJ max 175 °C) [DATA_NEEDED: junction operating temperature range]
Pin-Anzahl 8 + exposed source tab —
RoHS-Status Compliant —
MSL-Level 1 —
Automotive Qualified No (industrial grade; non-AEC-Q) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 3
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID, Tc=25C) — 100 A
Power Dissipation (PD, Tc=25C) — 300 W
On-State Resistance (RDS(on) max, VGS=10V) — 7.5 mOhm
Gate-Source Voltage (VGS) — [DATA_NEEDED: gate-source voltage absolute max]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Lead-Free / RoHS — RoHS Compliant
Ordering Code Suffix — GXKSA1 (Tube pack, RoHS compliant)

Datenblätter & Ressourcen

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