IPT067N20NM6ATMA1 vs IPT012N08N5ATMA1 Vergleich

Detaillierter Direktvergleich von IPT067N20NM6ATMA1 von Infineon und IPT012N08N5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPT067N20NM6ATMA1 IPT012N08N5ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $4,85 $4,32
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 —
Transistortyp N-Channel MOSFET —
Drain-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TA=25C 15.3 A —
Continuous Drain Current (ID) at TC=25C 137 A —
Power Dissipation (PD) at TA=25C 3.8 W —
Power Dissipation (PD) at TC=25C 300 W —
Montageart Surface Mount Surface Mount
Gehäuse PG-HSOF-8-1 (8-pin + exposed tab) PG-HSOF-8 (TOLL)
Betriebstemperaturbereich -55C to +150C (junction) -55C to +175C (TJ max)
Technology Trench-gate OptiMOS 6 silicon OptiMOS 5
Gate-Source Voltage (VGS) [DATA_NEEDED: max VGS rating] —
On-Resistance RDS(on) typ [DATA_NEEDED: RDS(on) at VGS=10V] —
Gate Charge (Qg) typ [DATA_NEEDED: total gate charge] —
Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical value] —
RoHS-Status Compliant Compliant
Lead-Free Yes —
MSL-Level [DATA_NEEDED: MSL moisture sensitivity level] —
Configuration Single N-channel —
Part Number — IPT012N08N5ATMA1
Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 80 V
Continuous Drain Current (ID, TC) — 300 A
Pulsed Drain Current (IDM) — 400 A
On-Resistance RDS(on) Max — 1.2 mOhm
Total Gate Charge QG — 208 nC
Gate-to-Drain Charge QGD — 178 nC
Power Dissipation (PD, TC) — 375 W
Qualification — JEDEC JESD47, JESD22, J-STD-020 (industrial)

Datenblätter & Ressourcen

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