IPT067N20NM6ATMA1 vs ISC009N06LM5ATMA1 Vergleich
Detaillierter Direktvergleich von IPT067N20NM6ATMA1 von Infineon und ISC009N06LM5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPT067N20NM6ATMA1 | ISC009N06LM5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,85 | $2,86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | — |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V | 60 V |
| Continuous Drain Current (ID) at TA=25C | 15.3 A | — |
| Continuous Drain Current (ID) at TC=25C | 137 A | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Power Dissipation (PD) at TC=25C | 300 W | — |
| Montageart | Surface Mount | Surface Mount |
| Gehäuse | PG-HSOF-8-1 (8-pin + exposed tab) | PG-TSON-8-3 (SuperSO8 5x6) |
| Betriebstemperaturbereich | -55C to +150C (junction) | -55 C to +175 C |
| Technology | Trench-gate OptiMOS 6 silicon | OptiMOS 5 60V N-channel trench MOSFET |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| On-Resistance RDS(on) typ | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Gate Charge (Qg) typ | [DATA_NEEDED: total gate charge] | — |
| Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical value] | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL-Level | [DATA_NEEDED: MSL moisture sensitivity level] | [DATA_NEEDED: MSL rating] |
| Configuration | Single N-channel | — |
| Series | — | OptiMOS 5 |
| Continuous Drain Current (ID) at Ta | — | 41 A |
| Continuous Drain Current (ID) at Tc | — | 348 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS maximum rating] |
| Gate-Source Threshold (VGS(th)) | — | [DATA_NEEDED: VGS threshold typical] |
| On-Resistance RDS(on) max at VGS=10V | — | 0.9 mOhm |
| Power Dissipation at Ta (PD) | — | 3 W |
| Power Dissipation at Tc (PD) | — | 214 W |