IPTG025N15NM6ATMA1 vs IPT015N10NF2SATMA1 Vergleich
Detaillierter Direktvergleich von IPTG025N15NM6ATMA1 von Infineon und IPT015N10NF2SATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPTG025N15NM6ATMA1 | IPT015N10NF2SATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,52 | $3,10 |
| Manufacturer | Infineon Technologies | — |
| Technology | OptiMOS 6 150 V (N-channel trench) | OptiMOS trench, N-channel enhancement |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 150 V | 100 V |
| Continuous Drain Current (ID) at TA=25C | 26 A | — |
| Continuous Drain Current (ID) at TC=25C | 264 A (pulsed) | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Power Dissipation (PD) at TC=25C | 395 W | — |
| On-State Resistance RDS(on) typ | 2.5 mOhm at VGS=10 V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg value] | — |
| Gehäuse | PG-HSOG-8-1 (TOLG) | PG-HSOF-8-10 (9-pin, 8+tab) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 C to +175 C (typical for OptiMOS 6) | -55 °C to +175 °C |
| RoHS-Status | Compliant | Compliant |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020) | — |
| Solder Joint Reliability | Excellent - 30% smaller footprint than D2PAK | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 315 A |
| Continuous Drain Current (ID, Ta) | — | 35 A |
| On-Resistance (RDS(on)) at VGS=10V | — | 1.5 mΩ |
| Gate-Source Threshold (VGS(th)) | — | 3.8 V at 267 µA |
| Total Power Dissipation (Ta) | — | 3.8 W |
| Total Power Dissipation (Tc) | — | 300 W |
| Gate Drive Voltage (typ) | — | 10 V |
| Einzelpuls-Avalanche-Energie | — | [DATA_NEEDED: EAS value] |